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BAT54CLT1 Datasheet, PDF (2/4 Pages) ON Semiconductor – Dual Series Schottky Barrier Diodes | |||
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BAT54CLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Reverse Breakdown Voltage (IR = 10 mA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
V(BR)R
CT
IR
VF
VF
VF
trr
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
NonâRepetitive Peak Forward Current (t < 1.0 s)
VF
VF
IF
IFRM
IFSM
Min Typ Max Unit
30
â
â
V
â
7.6 10
pF
â
0.5 2.0 mAdc
â 0.22 0.24 Vdc
â 0.41 0.5 Vdc
â 0.52 0.8 Vdc
â
â
5.0
ns
â 0.29 0.32 Vdc
â 0.35 0.40 Vdc
â
â
200 mAdc
â
â
300 mAdc
â
â
600 mAdc
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