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BAT41HT1G Datasheet, PDF (2/4 Pages) ON Semiconductor – Schottky Barrier Diodes
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BAT41HT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 μA)
VR
V
100
−
−
Reverse Leakage
(VR = 50 V)
IR
μAdc
−
−
0.1
Forward Voltage
(IF = 1 mAdc)
VF
−
Vdc
−
0.45
Forward Voltage
(IF = 10 mAdc)
VF
−
Vdc
−
0.6
Forward Voltage
(IF = 100 mAdc)
VF
−
Vdc
−
0.82
Forward Voltage
(IF = 200 mAdc)
VF
−
Vdc
−
1.0
Forward Voltage Reverse Leakage
(VR = 100 V)
IR
mAdc
−
−
0.2
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
−
pF
4
10
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