BAS70LT1G_11 Datasheet, PDF(2/3 Page) ON Semiconductor – Schottky Barrier Diodes Extremely Fast Switching Speed Low Forward Voltage

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BAS70LT1G_11 Datasheet, PDF (2/3 Pages) ON Semiconductor – Schottky Barrier Diodes Extremely Fast Switching Speed Low Forward Voltage

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BAS70LT1G, NSVBAS70LT1G

ELECTRICAL CHARACTERISTICS (TA = 25ï°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Reverse Breakdown Voltage

(IR = 10 mA)

V(BR)R

Total Capacitance

(VR = 0 V, f = 1.0 MHz)

2.0

Reverse Leakage

(VR = 50 V)

(VR = 70 V)

0.1

Forward Voltage

(IF = 1.0 mA)

410

Forward Voltage

(IF = 10 mA)

750

Forward Voltage

(IF = 15 mA)

1.0

100

1.0

150ï°C

1â25ï°C

85ï°C

-â40ï°C

25ï°C

-â55ï°C

0.1

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VF, FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

100

TA = 150ï°C

10 125ï°C

1.0

85ï°C

0.1

0.01

25ï°C

0.001

0 5.0 10 15 20 25 30 35 40 45 50

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Reverse Current versus Reverse

Voltage

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0 5.0 10 15 20 25 30 35 40 45 50

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Capacitance

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