BAS70-04LT1G_16 Datasheet, PDF (2/3 Pages) ON Semiconductor – Dual Series Schottky Barrier Diode

BAS70−04LT1G, SBAS70−04LT1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage (I_R = 10 μA)
V_(BR)R
70
−
V
Total Capacitance (V_R = 0 V, f = 1.0 MHz)
Reverse Leakage (V_R = 50 V)
(V_R = 70 V)
C_T
−
2.0
pF
I_R
−
0.1
μA
−
10
Forward Voltage (I_F = 1.0 mA)
V_F
−
410
mV
Forward Voltage (I_F = 10 mA)
V_F
−
750
mV
Forward Voltage (I_F = 15 mA)
V_F
−
1.0
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS
100
10
1.0
150°C
1 25°C
85°C
- 40°C
25°C
0.1
- 55°C
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V_F, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
100
T_A = 150°C
10
125°C
1.0
85°C
0.1
0.01
25°C
0.001
0 5.0 10 15 20 25 30 35 40 45 50
V_R, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current versus Reverse
Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 5.0 10 15 20 25 30 35 40 45 50
V_R, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
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