BAS70-04LT1G Datasheet, PDF(2/3 Page) ON Semiconductor – Dual Series Schottky Barrier Diode

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BAS70-04LT1G Datasheet, PDF (2/3 Pages) ON Semiconductor – Dual Series Schottky Barrier Diode

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BAS70â04LT1G

ELECTRICAL CHARACTERISTICS (TA = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Reverse Breakdown Voltage (IR = 10 Î¼A)

Total Capacitance (VR = 0 V, f = 1.0 MHz)

Reverse Leakage (VR = 50 V)

(VR = 70 V)

V(BR)R

2.0

0.1

Î¼A

Forward Voltage (IF = 1.0 mA)

410

Forward Voltage (IF = 10 mA)

Forward Voltage (IF = 15 mA)

750

1.0

100

1.0

150Â°C

1â25Â°C

85Â°C

-â40Â°C

25Â°C

0.1

-â55Â°C

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VF, FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

100

TA = 150Â°C

125Â°C

1.0

85Â°C

0.1

0.01

25Â°C

0.001

0 5.0 10 15 20 25 30 35 40 45 50

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Reverse Current versus Reverse

Voltage

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0 5.0 10 15 20 25 30 35 40 45 50

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Capacitance

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