ATP301 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

ATP301
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--100V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--14A
ID=--14A, VGS=--10V
VDS=--20V, f=1MHz
See specified Test Circuit.
VDS=--60V, VGS=--10V, ID=--28A
IS=--28A, VGS=0V
Ratings
Unit
min
typ
max
--100
V
--1
μA
±10
μA
--2.0
--3.5
V
32
S
57
75 mΩ
4000
pF
270
pF
150
pF
32
ns
130
ns
330
ns
190
ns
73
nC
16
nC
14
nC
--1.0
--1.5
V
Switching Time Test Circuit
Avalanche Resistance Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.≤1%
G
VDD= --60V
ID= --14A
RL=4.3Ω
D
VOUT
0V
--10V
≥50Ω
RG
50Ω
L
ATP301
VDD
ATP301
P.G
50Ω
S
Ordering Information
Device
ATP301-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1457-2/7