English
Language : 

AMIS-42670_13 Datasheet, PDF (2/10 Pages) ON Semiconductor – High-Speed CAN Transceiver for Long Networks
AMIS−42670
Table 1. TECHNICAL CHARACTERISTICS
Symbol
Parameter
Condition
VCANH
VCANL
Vo(dif)(bus_dom)
DC Voltage at Pin CANH
DC Voltage at Pin CANL
Differential Bus Output Voltage in
Dominant State
0 < VCC < 5.25 V; no time limit
0 < VCC < 5.25 V; no time limit
42.5 W < RLT < 60 W
tpd(rec−dom)
tpd(dom−rec)
CM−range
Propagation Delay TxD to RxD
Propagation Delay TxD to RxD
Input Common−Mode Range for
Comparator
See Figure 6
See Figure 6
Guaranteed Differential Receiver Threshold
and Leakage Current
VCM−peak
Common−Mode Peak
See Figures 7 and 8 (Note 1)
VCM−step
Common−Mode Step
See Figures 7 and 8 (Note 1)
1. The parameters VCM−peak and VCM−step guarantee low electromagnetic emission.
VCC
S8
VCC
3
Thermal
Shutdown
Max Max Unit
−45
+45
V
−45
+45
V
1.5
3
V
70
245
ns
100
245
ns
−35
+35
V
−500 500
mV
−150 150
mV
TxD
1
AMIS−42670
Driver
Control
7 CANH
6 CANL
RxD 4
VREF 5
COMP
Ri(cm)
Vcc/2
+
Ri(cm)
2
PD20070831.4
GND
Figure 1. Block Diagram
Table 2. PIN DESCRIPTION
Pin
Name
Description
1
TxD
Transmit Data Input; Low Input → Dominant Driver; Internal Pullup Current
2
GND
Ground
3
VCC
Supply Voltage
4
RxD
Receive Data Output; Dominant Transmitter → Low Output
5
VREF
Reference Voltage Output
6
CANL Low−Level CAN Bus Line (Low in Dominant Mode)
7
CANH High−Level CAN Bus Line (High in Dominant Mode)
8
S
Silent Mode Control Input; Internal Pulldown Current
http://onsemi.com
2