74FST6800 Datasheet, PDF (2/6 Pages) ON Semiconductor – 10−Bit Bus Switch with Precharged Outputs

2
A₀
74FST6800
13 _{Bias V}
23
B₀
11
A₉
14
B₉
1
OE
Figure 2. Logic Diagram
ORDERING INFORMATION
Device Order Number
Package
Shipping^†
74FST6800DW
SOIC−24
48 Units / Rail
74FST6800DWR2
SOIC−24
2500 Units / Tape & Reel
74FST6800DT
TSSOP−24*
(Pb−Free)
96 Units / Rail
74FST6800DTR2
TSSOP−24*
(Pb−Free)
2500 Units / Tape & Reel
74FST6800QS
QSOP−24
96 Units / Rail
74FST6800QSR
QSOP−24
2500 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V_CC
V_I
V_O
I_IK
I_OK
I_O
I_CC
I_GND
T_STG
T_L
T_J
q_JA
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Sink Current
DC Supply Current per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
V_I t GND
V_O t GND
SOIC
TSSOP
QSOP
*0.5 to )7.0
*0.5 to )7.0
*0.5 to )7.0
*50
*50
128
$100
$100
*65 to )150
260
)150
125
170
200
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
°C/W
MSL Moisture Sensitivity
Level 1
F_R
V_ESD
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
Human Body Model (Note 1)
u2000
V
Machine Model (Note 2)
u200
Charged Device Model (Note 3)
N/A
I_Latchup Latchup Performance
Above V_CC and Below GND at 85°C (Note 4)
$500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A.
2. Tested to EIA/JESD22−A115−A.
3. Tested to JESD22−C101−A.
4. Tested to EIA/JESD78.
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