584826 Datasheet, PDF(2/4 Page) ON Semiconductor – Dual Switching Diode Common Cathode

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

584826 Datasheet, PDF (2/4 Pages) ON Semiconductor – Dual Switching Diode Common Cathode

◁

BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G

ELECTRICAL CHARACTERISTICS (TA = 25Â°C unless otherwise noted) (Each Diode)

Characteristic

Symbol

Min

Max

Unit

Reverse Breakdown Voltage

(I(BR) = 100 mA)

V(BR)

100

Reverse Voltage Leakage Current (Note 3)

(VR = 25 V, TJ = 150Â°C)

(VR = 100 V)

(VR = 70 V, TJ = 150Â°C)

Diode Capacitance

(VR = 0 V, f = 1.0 MHz)

2.5

100

1.5

Forward Voltage

(IF = 1.0 mA)

(IF = 10 mA)

(IF = 50 mA)

(IF = 150 mA)

Reverse Recovery Time

RL = 100 W

(IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1)

3. For each individual diode while second diode is unbiased.

715

855

1000

1250

trr

6.0

820 W

+10 V

2.0 k

100 mH IF

0.1 mF

50 W OUTPUT

PULSE

GENERATOR

D.U.T.

0.1 mF

10%

50 W INPUT

SAMPLING

OSCILLOSCOPE

90%

INPUT SIGNAL

trr

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp Â» trr

Figure 1. Recovery Time Equivalent Test Circuit

http://onsemi.com

▷