3LN01SS Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

3LN01SS
Electrical Characteristics at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100μA
VDS=10V, ID=80mA
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=10V, VGS=10V, ID=150mA
IS=150mA, VGS=0V
Switching Time Test Circuit
4V ^VIN
0V
VIN
PW=10μs
D.C.≤1%
VDD=15V
ID=80mA
RL=187.5Ω
D
VOUT
G
3LN01SS
P.G
50Ω
S
Ratings
Unit
min
typ
max
30
V
1
μA
±10
μA
0.4
1.3
V
0.15
0.22
S
2.9
3.7
Ω
3.7
5.2
Ω
6.4
12.8
Ω
7.0
pF
5.9
pF
2.3
pF
19
ns
65
ns
155
ns
120
ns
1.58
nC
0.26
nC
0.31
nC
0.87
1.2
V
No.6546-2/6