2SD1835 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – Driver Applications

2SD1835
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=50V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=100mA
VCE=2V, IC=1.5A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC=1A, IB=50mA
IC=1A, IB=50mA
IC=10μA, IE=0A
IC=1mA, RBE=∞
IE=10μA, IC=0A
See specified Test Circuit.
* : The 2SD1835 is classified by 100mA hFE as follows :
Rank
R
S
hFE
100 to 200
140 to 280
T
200 to 400
U
280 to 560
Switching Time Test Circuit
IB1
IB2
INPUT
VR
RB
OUTPUT
RL
50Ω
+
+
100μF
470μF
VBE= --5V
VCC
IC=10IB1= --10IB2=500mA, VCC=25V
Ordering Information
Device
2SD1835S
2SD1835T
2SD1835S-AA
2SD1835T-AA
Package
NP
NP
NP
NP
Shipping
500pcs./bag
500pcs./bag
1,500pcs./box
1,500pcs./box
Ratings
min
typ
100*
40
150
12
0.15
0.9
60
50
6
60
550
30
max
100
100
560*
0.4
1.2
Unit
nA
nA
MHz
pF
V
V
V
V
V
ns
ns
ns
memo
Pb Free
IC -- VCE
2.4
50mA
2.0
40mA
25mA
1.6
15mA
1.2
8mA
0.8
4mA
2mA
0.4
0
IB=0mA
0
0.4
0.8
1.2
1.6
2.0
2.4
Collector-to-Emitter Voltage, VCE -- V ITR09361
1200
1000
800
600
400
200
0
0
IC -- VCE
7mA
6mA
5mA
4mA
3mA
2mA
1mA
IB=0mA
2
4
6
8
10
12
Collector-to-Emitter Voltage, VCE -- V ITR09363
No.2158-2/7