2SC6094 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

2SC6094
Continued from preceding page.
Parameter
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
IB
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm²Ã—0.8mm)
Tc=25°C
Ratings
Unit
600 mA
1.3
W
3.5
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=50V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=100mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
IC=1A, IB=50mA
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=10μA, IE=0A
IC=100μA, RBE=0Ω
IC=1mA, RBE=∞
IE=10μA, IC=0A
See specified Test Circuit.
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
OUTPUT
INPUT _VR10
RB
RL
50Ω
+
100μF
VBE= --5V
+
470μF
VCC=30V
IC=10IB1= --10IB2=0.5A
Ratings
min
typ
300
390
18
90
80
0.84
100
100
60
6.5
35
680
24
max
1
1
600
135
120
1.2
Unit
μA
μA
MHz
pF
mV
mV
V
V
V
V
V
ns
ns
ns
Ordering Information
Device
2SC6094-TD-E
Package
PCP
Shipping
1,000pcs./reel
memo
Pb Free
No. A0410-2/7