2SC6043 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications

Electrical Characteristics at Ta = 25°C
2SC6043
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=40V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=100mA
VCE=2V, IC=1.5A
VCE=10V, IC=300mA
VCB=10V, f=1MHz
IC=1A, IB=50mA
IC=1A, IB=50mA
IC=10μA, IE=0A
IC=100μA, RBE=0Ω
IC=1mA, RBE=∞
IE=10μA, IC=0A
See specified Test Circuit
Switching Time Test Circuit
Ratings
min
typ
200
40
420
9
150
0.94
80
80
50
6
35
330
40
Unit
max
1 μA
1 μA
560
MHz
pF
300 mV
1.2 V
V
V
V
V
ns
ns
ns
Ordering Information
Device
2SC6043
2SC6043-AE
Package
MP
Shipping
500pcs./bag
1,000pcs./box
Memo
Pb Eree
No.8326-2/5