2SC5994-TD-E Datasheet, PDF (2/7 Pages) ON Semiconductor – Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single PCP

2SC5994
Continued from preceding page.
Parameter
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (450mm²Ã—0.8mm)
Tc=25°C
Ratings
Unit
1.3
W
3.5
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=50V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=100mA
VCE=2V, IC=1.5A
VCE=10V, IC=300mA
VCB=10V, f=1MHz
IC=1A, IB=50mA
IC=1A, IB=50mA
IC=10μA, IE=0A
IC=100μA, RBE=0Ω
IC=1mA, RBE=∞
IE=10μA, IC=0A
See specified Test Circuit.
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
INPUT
VR
RB
OUTPUT
RL
50Ω
+
100μF
VBE= --5V
+
470μF
VCC=25V
IC=10IB1= --10IB2=700mA
Ratings
min
typ
200
40
420
9
135
0.9
100
100
50
6
30
330
40
max
1
1
560
300
1.2
Unit
μA
μA
MHz
pF
mV
V
V
V
V
V
ns
ns
ns
Ordering Information
Device
2SC5994-TD-E
Package
PCP
Shipping
1,000pcs./reel
memo
Pb Free
No.8035-2/7