2SB1123 Datasheet, PDF (2/8 Pages) Sanyo Semicon Device – High-Current Switching Applications

2SB1123 / 2SD1623
Continued from preceding page.
Parameter
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm²Ã—0.8mm)
Ratings
Unit
0.5
W
1.3
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=(--)50V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)100mA
VCE=(--)2V, IC=(--)1.5A
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz
IC=(--)1A, IB=(--)50mA
IC=(--)1A, IB=(--)50mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
IE=(--)10μA, IC=0A
See specified Test Circuit.
* : The 2SB1123 / 2SD1623 are classified by 100mA hFE as follows :
Rank
R
S
hFE
100 to 200
140 to 280
T
200 to 400
Switching Time Test Circuit
PW=20μs
D.C.≤1%
IB1
RB
OUTPUT
INPUT
VR
IB2
RL=50Ω
50Ω
+
100μF
--5V
+
470μF
25V
IC=10IB1= --10IB2=500mA
(For PNP, the polarity is reversed)
Ratings
min
typ
100*
40
(--)60
(--)50
(--)6
150
(22)12
(--0.3)0.15
(--)0.9
(60)60
(450)550
(30)30
max
(--)100
(--)100
560*
(--0.7)0.4
(--)1.2
Unit
nA
nA
MHz
pF
V
V
V
V
V
ns
ns
ns
U
280 to 560
Ordering Information
Device
2SB1123S-TD-E
2SB1123T-TD-E
2SD1623S-TD-E
2SD1623T-TD-E
Package
PCP
PCP
PCP
PCP
Shipping
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
memo
Pb Free
No.1727-2/8