2SA2205 Datasheet, PDF (2/9 Pages) Sanyo Semicon Device – PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

2SA2205
Continued from preceding page.
Parameter
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
Unit
--2
A
--3
A
--400 mA
0.8
W
15
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=--80V, IE=0A
VEB=--4V, IC=0A
VCE=--5V, IC=--100mA
VCE=--10V, IC=--500mA
VCB=--10V, f=1MHz
IC=--1A, IB=--100mA
IC=--1A, IB=--100mA
IC=--10μA, IE=0A
IC=--100μA, RBE=0Ω
IC=--1mA, RBE=∞
IE=--10μA, IC=0A
See specified Test Circuit.
Ratings
min
typ
200
--100
--100
--100
--7
300
20
--120
--0.85
40
600
30
max
--1
--1
400
--240
--1.2
Unit
μA
μA
MHz
pF
mV
V
V
V
V
V
ns
ns
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
OUTPUT
INPUT
VR
50Ω
1kΩ
+
220μF
RL
+
470μF
VBE=5V
VCC= --50V
IC=10IB1= --10IB2= --0.5A
Ordering Information
Device
2SA2205-E
2SA2205-TL-E
Package
TP
TP-FA
Shipping
500pcs./bag
700pcs./reel
memo
Pb Free
No. A0544-2/9