2SA2202 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – High-Voltage Switching Applications

Continued from preceding page.
Parameter
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
2SA2202
Symbol
IB
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm²Ã—0.8mm)
Tc=25°C
Ratings
Unit
--400 mA
1.3
W
3.5
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=--80V, IE=0A
VEB=--4V, IC=0A
VCE=--5V, IC=--100mA
VCE=--10V, IC=--500mA
VCB=--10V, f=1MHz
IC=--1A, IB=--100mA
IC=--1A, IB=--100mA
IC=--10μA, IE=0A
IC=--100μA, RBE=0Ω
IC=--1mA, RBE=∞
IE=--10μA, IC=0A
See specified Test Circuit.
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
VR
IB1
IB2
RB
50Ω
+
220μF
OUTPUT
+
470μF
RL=100Ω
VBE=5V
VCC= --50V
IC=10IB1= --10IB2= --0.5A
Ratings
min
typ
200
--100
--100
--100
--7
300
23
--120
--0.85
40
600
30
max
--1
--1
400
--240
--1.2
Unit
μA
μA
MHz
pF
mV
V
V
V
V
V
ns
ns
ns
Ordering Information
Device
2SA2202-TD-E
Package
PCP
Shipping
1,000pcs./reel
memo
Pb Free
--2.0
--1.6
--1.2
--0.8
--0.4
0
0
IC -- VCE
--120mA
--100mA
--80mA
--60mA
--40mA
--20mA
IB= --5mA
--0.1
--0.2
--0.3
--0.4
--0.5
Collector to Emitter Voltage, VCE -- V IT11879
--2.0
VCE= --5V
--1.8
IC -- VBE
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base to Emitter Voltage, VBE -- V IT11880
No.A0583-2/4