2SA2127 Datasheet, PDF (2/9 Pages) Seme LAB – PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

2SA2127
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB= --40V, IE=0A
VEB= --4V, IC=0A
VCE= --2V, IC= --100mA
VCE= --2V, IC= --1.5A
VCE= --10V, IC= --300mA
VCB= --10V, f=1MHz
IC= --1A, IB= --50mA
IC= --1A, IB= --50mA
IC= --10μA, IE=0A
IC= --1mA, RBE=∞
IE= --10μA, IC=0A
See specified Test Circuit.
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100μF
VBE=5V
IC=10IB1= --10IB2= --0.5A
IC
OUTPUT
RL
+
470μF
VCC= --25V
Ordering Information
Device
2SA2127
2SA2127-AE
Package
MP
MP
Shipping
500pcs./bag
1,000pcs./box
Ratings
min
typ
200
40
420
16
--0.2
--0.9
--50
--50
--6
35
250
24
max
--1
--1
560
--0.4
--1.2
Unit
μA
μA
MHz
pF
V
V
V
V
V
ns
ns
ns
memo
Pb Free
No.8022-2/9