2N5088 Datasheet, PDF (2/8 Pages) ON Semiconductor – Amplifier Transistor(NPN Silicon)

2N5088 2N5089
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(IC = 100 µAdc, VCE = 5.0 Vdc)
2N5088
2N5089
hFE
300
400
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)(2)
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base–Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc)(2)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ,
f = 1.0 kHz)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2N5088
2N5089
2N5088
2N5089
2N5088
2N5089
2N5088
2N5089
350
450
300
400
VCE(sat)
—
VBE(on)
—
fT
50
Ccb
—
Ceb
—
hfe
350
450
NF
—
—
Max
900
1200
—
—
—
—
0.5
0.8
—
4.0
10
1400
1800
3.0
2.0
Unit
—
Vdc
Vdc
MHz
pF
pF
—
dB
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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