2N4921G_17 Datasheet, PDF(2/6 Page) ON Semiconductor – Medium-Power Plastic NPN Silicon Transistors

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2N4921G_17 Datasheet, PDF (2/6 Pages) ON Semiconductor – Medium-Power Plastic NPN Silicon Transistors

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2N4921G, 2N4922G, 2N4923G

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorâEmitter Sustaining Voltage (Note 3)

(IC = 0.1 Adc, IB = 0)

2N4921G

2N4922G

2N4923G

VCEO(sus)

Vdc

Collector Cutoff Current

(VCE = 20 Vdc, IB = 0)

2N4921G

(VCE = 30 Vdc, IB = 0)

2N4922G

(VCE = 40 Vdc, IB = 0)

2N4923G

ICEO

mAdc

0.5

Collector Cutoff Current

(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)

(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_C

Collector Cutoff Current

(VCB = Rated VCB, IE = 0)

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

ICEX

ICBO

IEBO

mAdc

0.1

0.5

mAdc

0.1

mAdc

1.0

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

CollectorâEmitter Saturation Voltage (Note 3)

(IC = 1.0 Adc, IB = 0.1 Adc)

BaseâEmitter Saturation Voltage (Note 3)

(IC = 1.0 Adc, IB = 0.1 Adc)

hFE

VCE(sat)

VBE(sat)

150

Vdc

0.6

Vdc

1.3

BaseâEmitter On Voltage (Note 3)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

VBE(on)

Vdc

1.3

SMALLâSIGNAL CHARACTERISTICS

CurrentâGain â Bandwidth Product

(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

MHz

3.0

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 100 kHz)

Cob

100

SmallâSignal Current Gain

(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: PW â 300 ms, Duty Cycle â 2.0%.

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