2N4029_13 Datasheet, PDF (2/6 Pages) ON Semiconductor – Small Signal Switching Transistor

2N4029, 2N4033
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = −10 mAdc)
Collector −Emitter Cutoff Current
(V_CE = −60 Vdc)
Collector−Base Cutoff Current
(V_CB = −80 Vdc, I_E = 0)
(V_CB = −60 Vdc, I_E = 0)
Emitter−Base Cutoff Current
(V_EB = −5 Vdc)
(V_EB = −3 Vdc)
ON CHARACTERISTICS (Note 1)
V_(BR)CEO
−80
I_CES
−
I_CBO
−
−
I_EBO
−
−
Vdc
−
nAdc
−25
−10
mA
−10
nA
−10
mA
−25
nA
DC Current Gain
(I_C = −0.1 mAdc, V_CE = −5 Vdc)
(I_C = −100 mAdc, V_CE = −5 Vdc)
(I_C = −500 mAdc, V_CE = −5 Vdc)
(I_C = −1 Adc, V_CE = −5 Vdc)
Collector −Emitter Saturation Voltage
(I_C = −150 mAdc, I_B = −15 mAdc)
(I_C = −500 mAdc, I_B = −50 mAdc)
(I_C = −1 Adc, I_B = −100 mAdc)
Base −Emitter Saturation Voltage
(I_C = −150 mAdc, I_B = −15 mAdc)
(I_C = −500 mAdc, I_B = −50 mAdc)
SMALL− SIGNAL CHARACTERISTICS
h_FE
V_CE(sat)
V_BE(sat)
−
50
−
100
300
70
−
25
−
Vdc
−
−0.15
−
−0.5
−
−1.0
Vdc
−
−0.9
−
−1.2
Magnitude of Small−Signal Current Gain
(I_C = −50 mAdc, V_CE = −10 Vdc, f = 100 MHz)
Output Capacitance
(V_CB = −10 Vdc, I_E = 0, 100 kHz ≤ f ≤ 1.0 MHz)
Input Capacitance
(V_EB = −0.5 Vdc, I_C = 0, 100 kHz ≤ f ≤ 1.0 MHz)
SWITCHING CHARACTERISTICS
|h_fe|
C_obo
C_ibo
−
1.5
6.0
pF
−
20
pF
−
80
Delay Time
(Reference Figure in MIL−PRF−19500/512)
t_d
−
15
ns
Rise Time
(Reference Figure in MIL−PRF−19500/512)
t_r
−
25
ns
Storage Time
(Reference Figure in MIL−PRF−19500/512)
t_s
−
175
ns
Fall Time
(Reference Figure in MIL−PRF−19500/512)
t_f
−
35
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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