2N3906_10 Datasheet, PDF (2/7 Pages) SeCoS Halbleitertechnologie GmbH – PNP General Purpose Transistor

2N3906
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
(I_C = 1.0 mAdc, I_B = 0)
(I_C = 10 mAdc, I_E = 0)
(I_E = 10 mAdc, I_C = 0)
(V_CE = 30 Vdc, V_EB = 3.0 Vdc)
(V_CE = 30 Vdc, V_EB = 3.0 Vdc)
DC Current Gain
Collector −Emitter Saturation Voltage
(I_C = 0.1 mAdc, V_CE = 1.0 Vdc)
(I_C = 1.0 mAdc, V_CE = 1.0 Vdc)
(I_C = 10 mAdc, V_CE = 1.0 Vdc)
(I_C = 50 mAdc, V_CE = 1.0 Vdc)
(I_C = 100 mAdc, V_CE = 1.0 Vdc)
(I_C = 10 mAdc, I_B = 1.0 mAdc)
(I_C = 50 mAdc, I_B = 5.0 mAdc
Base −Emitter Saturation Voltage
(I_C = 10 mAdc, I_B = 1.0 mAdc)
(I_C = 50 mAdc, I_B = 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I_C = 10 mAdc, V_CE = 20 Vdc, f = 100 MHz)
Output Capacitance
(V_CB = 5.0 Vdc, I_E = 0, f = 1.0 MHz)
Input Capacitance
(V_EB = 0.5 Vdc, I_C = 0, f = 1.0 MHz)
Input Impedance
(I_C = 1.0 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(I_C = 1.0 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
Small−Signal Current Gain
(I_C = 1.0 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(I_C = 1.0 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(I_C = 100 mAdc, V_CE = 5.0 Vdc, R_S = 1.0 kW, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(V_CC = 3.0 Vdc, V_BE = 0.5 Vdc,
I_C = 10 mAdc, I_B1 = 1.0 mAdc)
Storage Time
(V_CC = 3.0 Vdc, I_C = 10 mAdc, I_B1 = I_B2 = 1.0 mAdc)
Fall Time
(V_CC = 3.0 Vdc, I_C = 10 mAdc, I_B1 = I_B2 = 1.0 mAdc)
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.
Symbol
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_BL
I_CEX
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_obo
C_ibo
h_ie
h_re
h_fe
h_oe
NF
t_d
t_r
t_s
t_f
Min
40
40
5.0
−
−
60
80
100
60
30
−
−
0.65
−
250
−
−
2.0
0.1
100
3.0
−
−
−
−
−
Max
Unit
−
Vdc
−
Vdc
−
Vdc
50
nAdc
50
nAdc
−
−
−
300
−
−
0.25
Vdc
0.4
0.85
Vdc
0.95
−
MHz
4.5
pF
10
pF
12
kW
10
X 10^{− 4}
400
−
60
mmhos
4.0
dB
35
ns
35
ns
225
ns
75
ns
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