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2N2219 Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN switching transistors
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2N2219, 2N2219A, 2N2219AL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IE = 10 mAdc)
V(BR)CEO
Vdc
2N2219
30
−
2N2219A/AL
50
−
Emitter−Base Cutoff Current
(VEB = 5.0 Vdc)
(VEB = 6.0 Vdc)
(VEB = 4.0 Vdc)
Collector−Emitter Cutoff Current
(VCE = 30 Vdc)
(VCE = 50 Vdc)
Collector−Base Cutoff Current
(VCB = 50 Vdc)
(VCB = 60 Vdc)
(VCB = 60 Vdc)
(VCB = 75 Vdc)
2N2219
2N2219A/AL
All
2N2219
2N2219A/AL
2N2219
2N2219
2N2219A/AL
2N2219A/AL
IEBO
ICES
ICBO
−
10
mAdc
−
10
mAdc
−
10
nAdc
−
10
nAdc
−
10
nAdc
−
10
nAdc
−
10
mAdc
−
10
nAdc
−
10
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
Collector −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Magnitude of Small−Signal Current Gain
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1 kHz)
hFE
2N2219
2N2219A/AL
2N2219
2N2219A/AL
2N2219
2N2219A/AL
2N2219/A/AL
2N2219/A/AL
−
35
−
50
−
50
325
75
325
75
−
100
−
100
300
30
−
VCE(sat)
Vdc
2N2219
−
0.4
2N2219A/AL
−
0.3
2N2219
−
1.6
2N2219A/AL
−
1.0
VBE(sat)
Vdc
2N2219
0.6
1.3
2N2219A/AL
0.6
1.2
2N2219
−
2.6
2N2219A/AL
−
2.0
|hfe|
−
2.5
12
hfe
2N2219
2N2219A/AL
−
50
−
75
−
Output Capacitance
(VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time
(Reference Figure in MIL−PRF−19500/251)
Cobo
Cibo
ton
2N2219
2N2219A/AL
pF
−
8.0
pF
−
25
ns
−
40
−
35
Turn−Off Time
(Reference Figure in MIL−PRF−19500/251)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
toff
2N2219
2N2219A/AL
ns
−
250
−
300
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