1SMB10CAT3_06 Datasheet, PDF (2/7 Pages) ON Semiconductor – Watt Peak Power Zener Transient Voltage Suppressors

1SMB10CAT3 Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
@ T_L = 25°C, Pulse Width = 1 ms
DC Power Dissipation @ T_L = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
DC Power Dissipation (Note 3) @ T_A = 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
Operating and Storage
Temperature Range
P_PK
P_D
R_qJL
P_D
R_qJA
T_J, T_stg
600
3.0
40
25
0.55
4.4
226
−65 to +150
W
W
mW/°C
°C/W
W
mW/°C
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec
*Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted)
Symbol
Parameter
I_PP
V_C
V_RWM
I_R
V_BR
I_T
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I_PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V_RWM
Breakdown Voltage @ I_T
Test Current
I
I_PP
I_T
V_C V_BR V_RWM I_R
I_R
I_T
V
V_RWM V_BR V_C
I_PP
Bi−Directional TVS
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