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| 1SMA5.0AT3_10 Datasheet, PDF (2/5 Pages) ON Semiconductor – 400 Watt Peak Power Zener Transient Voltage Suppressors | |||
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1SMA5.0AT3 Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction to Lead
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction to Ambient
PPK
PD
RqJL
PD
RqJA
400
W
1.5
W
20
mW/°C
50
°C/W
0.5
W
4.0
mW/°C
250
°C/W
Forward Surge Current (Note 4) @ TA = 25°C
IFSM
40
A
Operating and Storage Temperature Range
TJ, Tstg
â65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, nonârepetitive.
2. 1â³ square copper pad, FRâ4 board.
3. FRâ4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF = 30 A for all types) (Note 5)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
5. 1/2 sine wave or equivalent, PW = 8.3 ms, nonârepetitive duty
cycle.
I
IF
VC VBR VRWM
IIRT VF
V
IPP
UniâDirectional TVS
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