1.5SMC6.8AT3_07 Datasheet, PDF (2/7 Pages) ON Semiconductor – 1500 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional*

1.5SMC6.8AT3 Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ T_L = 25°C, Pulse Width = 1 ms
DC Power Dissipation @ T_L = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance, Junction−to−Lead
P_PK
P_D
R_qJL
1500
4.0
54.6
18.3
W
W
mW/°C
°C/W
DC Power Dissipation (Note 3) @ T_A = 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
P_D
R_qJA
0.75
W
6.1
mW/°C
165
°C/W
Forward Surge Current (Note 4) @ T_A = 25°C
I_FSM
200
A
Operating and Storage Temperature Range
T_J, T_stg
−65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive
2. 1 in. square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless
otherwise noted, V_F = 3.5 V Max. @ I_F (Note 5) = 100 A)
Symbol
Parameter
I_PP
Maximum Reverse Peak Pulse Current
V_C
Clamping Voltage @ I_PP
V_RWM Working Peak Reverse Voltage
I_R
Maximum Reverse Leakage Current @ V_RWM
V_BR
Breakdown Voltage @ I_T
I_T
Test Current
QV_BR Maximum Temperature Coefficient of V_BR
I_F
Forward Current
V_F
Forward Voltage @ I_F
5. 1/2 sine wave or equivalent, PW = 8.3 ms non−repetitive duty
cycle
I
I_F
V_C V_BR V_RWM
II_RT V_F
V
I_PP
Uni−Directional TVS
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