MUN5111DW1T1G Datasheet, PDF (18/20 Pages) ON Semiconductor – Dual Bias Resistor Transistors

MUN5111DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136DW1T1G
1
1000
75°C
100
T_A = −25°C
25°C
0.1
75°C
−25°C ^25°C
10
I_C/I_B = 10
0.01
1
0
1
2
3
4
5
6
7
1
I_C, COLLECTOR CURRENT (mA)
Figure 62. V_CE(sat) versus I_C
V_CE = 10 V
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 63. DC Current Gain
1.2
1.0
0.8
0.6
0.4
0.2
0
0
f = 1 MHz
I_E = 0 V
T_A = 25°C
10
20
30
40
50
60
V_R, REVERSE BIAS VOLTAGE (VOLTS)
Figure 64. Output Capacitance
100
25°C
75°C
10
T_A = −25°C
1
VV_OO ==55VV
0.1
0 1 2 3 4 5 6 7 8 9 10
V_in, INPUT VOLTAGE (VOLTS)
Figure 65. Output Current versus Input Voltage
100
25°C
10
T_A = −25°C
75°C
V_O = 0.2 V
1
0 2 4 6 8 10 12 14 16 18 20
I_C, COLLECTOR CURRENT (mA)
Figure 66. Input Voltage versus Output Current
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