NCP1612 Datasheet, PDF (11/30 Pages) ON Semiconductor – Enhanced, High-Efficiency Power Factor Controller

NCP1612
TYPICAL CHARACTERISTICS
250
98
225
200
175
150
−50 −30 −10 10 30 50 70 90 110 130
T_J, JUNCTION TEMPERATURE (°C)
Figure 21. Error Amplifier Transconductance
Gain vs. Temperature
0.5
0.4
0.3
0.2
0.1
0
−50 −30 −10 10 30 50 70 90 110 130
T_J, JUNCTION TEMPERATURE (°C)
Figure 23. Ratio (V_OUT Low Detect Hysteresis /
V_REF) vs. Temperature
520
515
510
505
500
495
490
485
480
−50 −30 −10 10 30 50 70 90 110 130
T_J, JUNCTION TEMPERATURE (°C)
Figure 25. Current Sense Voltage Threshold
vs. Temperature
97
96
95
94
93
−50 −30 −10 10 30 50 70 90 110 130
T_J, JUNCTION TEMPERATURE (°C)
Figure 22. Ratio (V_OUT Low Detect Threshold /
V_REF) vs. Temperature
280
260
240
220
200
180
160
140
−50 −30 −10 10 30 50 70 90 110 130
T_J, JUNCTION TEMPERATURE (°C)
Figure 24. V_CONTROL Source Current when
(V_OUT Low Detect) is Activated for Dynamic
Response Enhancer (DRE) vs. Temperature
280
260
240
220
200
180
160
140
120
−50 −30 −10 10 30 50 70 90 110 130
T_J, JUNCTION TEMPERATURE (°C)
Figure 26. Over−Current Protection Leading
Edge Blanking vs. Temperature
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