NCP623 Datasheet, PDF (10/14 Pages) ON Semiconductor – Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control

NCP623
TYPICAL PERFORMANCE CHARACTERISTICS
Noise Performances
350
300
250
200
C_byp = 10 nF
150
0 nF
3.3 nF
V_in = 3.8 V
V_out = 2.8 V
C_O = 1.0 mF
I_out = 60 mA
T_amb = 23°C
100 _{Vn = 65 mVrms @ Cbypass = 0}
50 ^{Vn = 30 mVrms @ Cbypass = 3.3 nF}
Vn = 25 mVrms @ C_bypass = 10 nF
0 over 100 Hz to 100 kHz
100
1000
10,000
100,000
FREQUENCY (Hz)
1,000,000
70
60
50
40
30
V_in = 3.8 V
20 V_out = 2.8 V
C_O = 1.0 mF
10 _{Iout = 60 mA}
0 ^{Tamb = 25°C}
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
BYPASS CAPACITOR (nF)
Figure 16. Noise Density versus Bypass
Capacitor
Figure 17. RMS Noise versus Bypass Capacitor
(100 Hz − 100 kHz)
Settling Time Performances
1200
1000
800
600
V_in = 3.8 V
V_out = 2.8 V
C_O = 1.0 mF
I_out = 60 mA
T_amb = 25°C
400
200
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
BYPASS CAPACITOR (nF)
200 ms/div
500 mV/div
C_byp = 10 nF
V_in = 3.8 V
V_out = 2.8 V
C_out = 1.0 mF
I_out = 50 mA
T_amb = 25°C
Figure 18. Output Voltage Settling Time versus
Bypass Capacitor
Figure 19. Output Voltage Settling Shape
C_bypass = 10 nF
100 ms/div
500 mV/div
C_byp = 3.3 nF
V_in = 3.8 V
V_out = 2.8 V
C_out = 1.0 mF
I_out = 50 mA
T_amb = 25°C
Figure 20. Output Voltage Settling Shape
C_bypass = 3.3 nF
10 ms/div
500 mV/div
C_byp = 0 nF
V_in = 3.8 V
V_out = 2.8 V
C_out = 1.0 mF
I_out = 50 mA
T_amb = 25°C
Figure 21. Output Voltage Settling Shape without
Bypass Capacitor
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