NCP1031MNTXG Datasheet, PDF (10/19 Pages) ON Semiconductor – Low Power PWM Controller with On--Chip Power Switch and Startup Circuits for 48 V Telecom Systems

NCP1030, NCP1031
1000
100
10
0
TYPICAL CHARACTERISTICS
NCP1031
NCP1030
40
80
120
160
200
V_DRAIN, DRAIN VOLTAGE (V)
Figure 22. Power Switch Circuit Output
Capacitance vs. Drain Voltage
40
35 ^{VCC = 12 V}
30
25
20
T_J = --40C
15
T_J = 25C
10
T_J = 125C
5
0
0
50
100
150
200
250 300
V_DRAIN, DRAIN VOLTAGE (V)
Figure 23. Power Switch Circuit and Startup
Circuit Leakage Current vs. Drain Voltage
600
575 _{Current Slew Rate = 500 mA/ms}
NCP1030
550
525
500
475
450
425
400
375
350
--50 --25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (C)
Figure 24. NCP1030 Current Limit Threshold
vs. Junction Temperature
1200
1150 _{Current Slew Rate = 1 A/ms}
NCP1031
1100
1050
1000
950
900
850
800
750
700
--50 --25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (C)
Figure 25. NCP1031 Current Limit Threshold
vs. Junction Temperature
600
575
T_J = 25C
550
NCP1030
525
500
475
450
425
400
375
350
375
400
425
450
475
500
CURRENT SLEW RATE (mA/mS)
Figure 26. NCP1030 Current Limit Threshold
vs. Current Slew Rate
1200
1150
1100
1050
1000
950
900
850
800
750
700
750
T_J = 25C
NCP1031
800
850
900
950
CURRENT SLEW RATE (mA/mS)
1000
Figure 27. NCP1031 Current Limit Threshold
vs. Current Slew Rate
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