MUN5211DW1T1G_09 Datasheet, PDF (10/20 Pages) ON Semiconductor – Dual Bias Resistor Transistors

MUN5211DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5215DW1T1G
1
I_C/I_B = 10
1000
75°C
75°C
0.1
−25°C
25°C
0.01
100 ^{TA = −25°C}
10
25°C
V_CE = 10 V
0.001
0
10
20
30
40
I_C, COLLECTOR CURRENT (mA)
Figure 22. V_CE(sat) versus I_C
1
50
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 23. DC Current Gain
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
f = 1 MHz
I_E = 0 V
T_A = 25°C
5 10 15 20 25 30 35 40 45 50
V_R, REVERSE BIAS VOLTAGE (VOLTS)
Figure 24. Output Capacitance
100
75°C
10
25°C
1
T_A = −25°C
0.1
0.01
V_O = 5 V
0.001
0 1 2 3 4 5 6 7 8 9 10
V_in, INPUT VOLTAGE (VOLTS)
Figure 25. Output Current versus Input Voltage
10
T_A = −25°C
1
25°C
75°C
V_O = 0.2 V
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
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10