WPB4002 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1769A
WPB4002
N-Channel Power MOSFET
600V, 23A, 0.36Ω, TO-3P-3L
http://onsemi.com
Features
• _{Reverse recovery time trr=115ns (typ)}
• _{Input capacitance Ciss=2200pF (typ)}
• _{ON-resistance RDS(on)=0.28Ω (typ)}
Specifications
• _{10V drive}
TO-3P-3L
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Source to Drain Diode Forward Current (DC)
Source to Drain Diode Forward Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
ISD
ISDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=50V, L=1mH, IAV=17A (Fig.1)
*2 L≤1mH, single pulse
Conditions
PW≤10μs, duty cycle≤1%
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
600
V
±30
V
23
A
80
A
23
A
80
A
2.5
W
220
W
150
°C
--55 to +150
°C
157 mJ
17
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
ID=10mA, VGS=0V
VDS=480V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=11.5A
ID=11.5A, VGS=10V
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=23A
IS=23A, VGS=0V
See Fig.3
ISD=23A, VGS=0V, di/dt=100A/μs
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Ratings
Unit
min
typ
max
600
V
100
μA
±100 nA
3
5
V
7.5
15
S
0.28
0.36
Ω
2200
pF
400
pF
83
pF
42
ns
130
ns
234
ns
84
ns
84
nC
15.2
nC
45.4
nC
1.1
1.5
V
115
ns
340
nC
Semiconductor Components Industries, LLC, 2013
August, 2013
82813 TKIM TC-00002977/60910QB TK IM TC-00002373 No. A1769-1/5