VN2410L Datasheet, PDF (1/3 Pages) Motorola, Inc – TMOS FET Transistor

VN2410L
Small Signal MOSFET
240 V, 200 mA, N−Channel TO−92
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain −Source Voltage
Drain −Gate Voltage
Gate −Source Voltage
− Continuous
− Non−repetitive (t_p ≤ 50 μs)
Continuous Drain Current
Pulsed Drain Current
Power Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_DM
P_D
240
Vdc
240
Vdc
± 20
Vdc
± 40
Vpk
200 mAdc
500 mAdc
350
mW
2.8 mW/°C
Operating and Storage Temperature
T_J, T_stg −55 to
°C
150
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction to Ambient
R_θJA
312.5 °C/W
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/16 inch from case for 10
seconds
300
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
200 mA, 240 V
R_DS(on) = 10 Ω
N−Channel
D
G
S
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
TO−92
CASE 29
STYLE 22
MARKING DIAGRAM
& PIN ASSIGNMENT
VN2
410L
AYWW
1
Source
3
Drain
2
Gate
A = Assembly Location
Y = Year
WW = Work Week
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
January, 2009 − Rev. 5
Publication Order Number:
VN2410L/D