VN2406L Datasheet, PDF (1/3 Pages) Motorola, Inc – TMOS FET Transistor

VN2406L
Preferred Device
Small Signal MOSFET
200 mAmps, 240 Volts
N−Channel TO−92
MAXIMUM RATINGS
Rating
Drain −Source Voltage
Drain −Gate Voltage
Gate −Source Voltage
− Continuous
− Non−repetitive (t_p ≤ 50 μs)
Continuous Drain Current
Pulsed Drain Current
Power Dissipation @ T_C = 25°C
Derate above 25°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/16″ from case for 10
seconds
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_DM
P_D
T_J, T_stg
Symbol
R_θJA
T_L
Value
240
240
± 20
± 40
200
500
350
2.8
−
Max
312.5
300
Unit
Vdc
Vdc
Vdc
Vpk
mAdc
mAdc
mW
mW/°C
°C
Unit
°C/W
°C
http://onsemi.com
200 mAMPS
240 VOLTS
R_DS(on) = 6 Ω
N−Channel
D
G
S
TO−92
CASE 29
Style 22
123
MARKING DIAGRAM
& PIN ASSIGNMENT
VN2406L
YWW
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 4
1
Source
3
Drain
2
Gate
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
VN2406L
VN2406LZL1
TO−92
TO−92
1000 Units/Box
2000 Ammo Pack
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
VN2406L/D