VN2222LL Datasheet, PDF (1/4 Pages) Motorola, Inc – TMOS FET Transistor

VN2222LL
Preferred Device
Small Signal MOSFET
150 mAmps, 60 Volts
N−Channel TO−92
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain −Source Voltage
Drain−Gate Voltage (R_GS = 1.0 MW)
Gate−Source Voltage
− Continuous
− Non−repetitive (t_p ≤ 50 ms)
Drain Current
− Continuous
− Pulsed
Total Power Dissipation @ T_A = 25°C
Derate above 25°C
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_DM
P_D
60
Vdc
60
Vdc
± 20
± 40
150
1000
400
3.2
Vdc
Vpk
mAdc
mW
mW/°C
Operating and Storage Temperature Range T_J, T_stg −55 to
°C
+150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case
for 10 seconds
R_qJA
T_L
312.5
300
°C/W
°C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
150 mA, 60 V
R_DS(on) = 7.5 W
N−Channel
D
G
S
123
TO−92
CASE 29
STYLE 22
MARKING DIAGRAM
& PIN ASSIGNMENT
VN22
22LL
AYWW
1
Source
2
Gate
3
Drain
A
= Assembly Location
Y
= Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
September, 2004 − Rev. 3
Publication Order Number:
VN2222LL/D