VN0610LL Datasheet, PDF (1/4 Pages) Calogic, LLC – N-Channel Enhancement-Mode MOS Transistors

VN0610LL
FET Transistor
N−Channel — Enhancement
MAXIMUM RATINGS
Rating
Drain −Source Voltage
Drain −Gate Voltage (R_GS = 1 MΩ)
Gate −Source Voltage
− Continuous
− Non−repetitive (t_p ≤ 50 μs)
Drain Current
Continuous
Pulsed
Total Power Dissipation @ T_A = 25°C
Derate above 25°C
Operating and Storage Temperature
Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to
Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16” from case
for 10 seconds
Symbol
V_DSS
V_DGR
Value
60
60
Unit
Vdc
Vdc
V_GS
V_GSM
I_D
I_DM
P_D
T_J, T_stg
± 20
± 40
190
1000
400
3.2
−55 to +150
Vdc
Vpk
mAdc
mW
mW/°C
°C
Symbol
R_θJA
T_L
Max
312.5
300
Unit
°C/W
°C
http://onsemi.com
1
23
CASE 29−11, STYLE 22
TO−92 (TO−226AA)
3 DRAIN
2
GATE
1 SOURCE
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 3
Publication Order Number:
VN0610LL/D