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VEC2616-TL-H Datasheet, PDF (1/9 Pages) ON Semiconductor – Power MOSFET 60V, 3A, 80mΩ, –60V, –2.5A, 137m, Complementary Dual VEC8
Ordering number : ENA1822A
VEC2616
Power MOSFET
60V, 3A, 80mΩ, –60V, –2.5A, 137mΩ, Complementary Dual VEC8
http://onsemi.com
Features
• ON-resistance Nch: RDS(on)1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.)
• 4V drive
• N-channel MOSFET + P-channel MOSFET
• Halogen free compliance
• Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
N-channel P-channel
Unit
VDSS
VGSS
ID
IDP
PD
PT
Tch
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
60
±20
3
12
0.9
1.0
150
--60
V
±20
V
--2.5
A
--10
A
W
W
°C
Tstg
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7012-002
0.3
8 7 65
0.15
VEC2616-TL-H
1234
0.65
2.9
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
VEC8
Product & Package Information
• Package
: VEC8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
UP
LOT No.
TL
Electrical Connection
8
7
6
5
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
80812 TKIM/91510PE TKIM TC-00002461 No. A1822-1/9