VEC2415-TL-E Datasheet, PDF (1/7 Pages) ON Semiconductor – N-Channel Power MOSFET 60V, 3A, 80mΩ, Dual VEC8

Ordering number : ENA1713A
VEC2415
N-Channel Power MOSFET
60V, 3A, 80mΩ, Dual VEC8
http://onsemi.com
Features
• _{Low ON-resistance}
• _{Composite type facilitating high-density mounting}
• _{4V drive}
• _{Mounting high 0.75mm}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
60
V
±20
V
3
A
12
A
0.9
W
1.0
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7012-002
0.3
8 7 65
0.15
VEC2415-TL-E
1234
0.65
2.9
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
VEC8
Product & Package Information
• Package
: VEC8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
UN
LOT No.
TL
Electrical Connection
8
7
6
5
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
80812 TKIM/51910PA TKIM TC-00002293 No. A1713-1/7