VEC2315 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFETs General-Purpose Switching Device Applications

VEC2315
Power MOSFET
–60V, 137mΩ, –2.5A, Dual P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
 Low On-Resistance
 4V drive
 Low-Profile Package
 ESD Diode-Protected Gate
 Pb-Free, Halogen Free and RoHS compliance
Typical Applications
 Motor Driver
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
20
V
Drain Current (DC)
ID
2.5
A
Drain Current (Pulse)
PW  10s, duty cycle  1%
IDP
10
A
Power Dissipation
When mounted on ceramic substrate
PD
(900mm²  0.8mm) 1unit
Total Dissipation
When mounted on ceramic substrate
PT
(900mm²  0.8mm)
0.9
W
1.0
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
55 to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm²  0.8mm) 1unit
Symbol
R_JA
Value
Unit
138.8 C/W
www.onsemi.com
VDSS
60V
RDS(on) Max
137mΩ@ 10V
180mΩ@ 4.5V
194mΩ@ 4V
ID _Max
2.5A
ELECTRICAL CONNECTION
P-Channel
8
7
6
5
1
2
3
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
PACKING TYPE : TL
MARKING
UM
LOT No.
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
October 2015 - Rev. 1
Publication Order Number :
VEC2315/D