TIG058E8 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – Light-Controlling Flash Applications

Ordering number : ENA1381A
TIG058E8
N-Channel IGBT
400V, 150A, VCE(sat);4V, Single ECH8
http://onsemi.com
Features
• _{Low-saturation voltage}
• _{Enhansment type}
• _{Mounting Height 0.9mm, Mounting Area 8.12mm}²
• _{Halogen free compliance}
• _{Low voltage drive (4V)}
• _{Built-in Gate-to-Emitter protection diode}
• _{dv / dt guarantee*}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Emitter Voltage
VCES
400
V
Gate-to-Emitter Voltage (DC)
VGES
±6
V
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
VGES
ICP
PW≤1ms
CM=150μF, VGE=4V
±8
V
150
A
Maximum Collector-to-Emitter dv / dt
dVCE / dt VCE≤320V, starting Tch=25°C
400 V / μs
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-40 to +150
°C
* : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-004
Top View
2.9
8
5
TIG058E8-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3000 pcs./reel
Packing Type: TL
Marking
ZB
TL
LOT No.
1
4
0.65
0.3
Bottom View
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
ECH8
Electrical Connection
8
7
6
5
1
2
3
4
Semiconductor Components Industries, LLC, 2013
September, 2013
60612 TKIM/D1008PJ MSIM TC-00001783 No. A1381-1/7