TF412S Datasheet, PDF (1/4 Pages) ON Semiconductor – N-Channel JFET

Ordering number : ENA2300A
TF412S
N-Channel JFET
30V, 1.2 to 3.0mA, 5.0mS, SOT-883
http://onsemi.com
Features
 Small IGSS : max 1.0nA (VGS= 20V, VDS=0V)
 Small Ciss : typ 4pF (VDS=10V, VGS=0V, f=1MHz)
 Ultrasmall package facilitates miniaturization in end products
 Halogen free compliance
Applications
 Low-Frequency general-purpose amplifier,
impedance conversion, infrared sensor applications
Electrical Connection
3
1 : Source
2 : Drain
3 : Gate
1
2 Top view
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Value
Unit
30
V
30
V
10 mA
10 mA
100 mW
150
C
55 to +150
C
This product is designed to “ESD immunity < 200V*”,
so please take care when handling.
* Machine Model
Marking
3
1
2
SOT-883
A2 M
M = Date Code
Ordering & Package Information
Device
TF412ST5G
Pb-free and
Halogen Free
Package
SOT-883
Shipping
8,000
pcs. / reel
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Electrical Characteristics at Ta  25C
Parameter
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Symbol
Conditions
V(BR)GDS
IGSS
VGS(off)
IDSS
| yfs |
Ciss
Crss
IG = 10μA, VDS=0V
VGS = 20V, VDS=0V
VDS = 10V, ID = 1μA
VDS = 10V, VGS = 0V
VDS = 10V, VGS=0V, f = 1kHz
VDS = 10V, VGS = 0V, f = 1MHz
min
30
Value
typ
0.18
1.2
3.0
0.80
5.0
4
1.1
Unit
max
V
1.0 nA
1.5 V
3.0 mA
mS
pF
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Semiconductor Components Industries, LLC, 2014
April, 2014
42114HK TC-00003110/22512HK GB No.A2300-1/4