TF410 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – N-Channel Silicon Junction FET Impedance Converter, Infrared Sensor Applications

Ordering number : ENA2007A
TF410
N-Channel JFET
40V, 50 to 130μA, 0.11mS, USFP
http://onsemi.com
Applications
• _{Impedance conversion, infrared sensor applications}
Features
• _{Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm)}
• _{Small IGSS : max --500pA (VGSS= --20V, VDS=0V)}
• _{Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz)}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGDS
IG
ID
PD
Tj
Tstg
Conditions
Ratings
Unit
40
V
--40
V
10 mA
1 mA
30 mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7055-003
0.6
0.2
3
TF410-TL-H
0.11
0 to 0.02
1
0.175
2
0.15
12
1 : Source
2 : Drain
3 : Gate
3
USFP
Product & Package Information
• Package
: USFP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 10,000 pcs./reel
Packing Type: TL
Marking
3
TL
B
Electrical Connection
3
1 : Source
2 : Drain
3 : Gate
1
2 Top view
12
Semiconductor Components Industries, LLC, 2013
August, 2013
53012 TKIM/22912GB TKIM TC-00002703 No. A2007-1/6