TF408 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – N-Channel Silicon Junction FET Low-Frequency General-Purpose Amplifi er, Impedance Converter Applications

Ordering number : ENA2008A
TF408
N-Channel JFET
30V, 0.6 to 3.0mA, 5.0mS, USFP
http://onsemi.com
Applications
• _{Low-Frequency general-purpose amplifier, impedance conversion, infrared sensor applications}
Features
• _{Ultrasmall package facilitates miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm)}
• _{Small IGSS : max --1.0nA (VGS= --20V, VDS=0V)}
• _{Small Ciss : typ 4pF (VDS= 10V, VGS=0V, f=1MHz)}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Conditions
Ratings
Unit
30
V
--30
V
10 mA
10 mA
30 mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7055-003
0.6
0.2
3
TF408-2-TL-H
0.11 ^TF408-3-TL-H
0 to 0.02
1
0.175
2
0.15
12
1 : Source
2 : Drain
3 : Gate
3
USFP
Product & Package Information
• Package
: USFP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 10,000 pcs./reel
Packing Type: TL
Marking
3
TL
A
Electrical Connection
3
1 : Source
2 : Drain
3 : Gate
1
2 Top view
12
Semiconductor Components Industries, LLC, 2013
August, 2013
53012 TKIM/22912GB TKIM TC-00002704 No. A2008-1/6