TF252TH Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – N-channel Silicon Junction FET Electret Condenser Microphone

Ordering number : ENA0842A
TF252TH
N-Channel JFET
20V, 140 to 350μA, 1.4mS, VTFP
http://onsemi.com
Features
• _{High gain : GV=1.0dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz)}
• _{Ultrasmall package facilitates miniaturization in end products}
• _{Best suited for use in electret condenser microphone for audio equipments and telephones}
• _{Excellent voltage characteristics}
• _{Excellent transient characteristics}
• _{Adoption of FBET process}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Conditions
Ratings
Unit
--20
V
10 mA
1 mA
100 mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7031A-001
1.4
0.25 0.1
3
TF252TH-4-TL-H
TF252TH-5-TL-H
0 to 0.02
1
0.45
2
0.2
12
3
1 : Drain
2 : Source
3 : Gate
VTFP
Product & Package Information
• Package
: VTFP
• JEITA, JEDEC
: SC-106A
• Minimum Packing Quantity : 8,000 pcs./reel
Packing Type: TL
Marking
D
TL
Electrical Connection
1
3
2
Semiconductor Components Industries, LLC, 2013
August, 2013
53012 TKIM/70407GB TI IM TC-00000796 No. A0842-1/7