TF252 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – N-channel Silicon Junction FET Electret Condenser Microphone

Ordering number : ENA0841B
TF252
N-Channel JFET
20V, 140 to 350μA, 1.4mS, USFP
http://onsemi.com
Features
• _{High gain : GV=1.0dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz)}
• _{Ultrasmall package facilitates miniaturization in end products [1.0mm×0.6mm×0.27mm (max 0.3mm)]}
• _{Best suited for use in Electret Condenser Microphone for audio equipments and telephones}
• _{Excellent voltage characteristics}
• _{Excellent transient characteristics}
• _{Adoption of FBET process}
• _{Halogen free compliance}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Conditions
Ratings
Unit
--20
V
10 mA
1 mA
30 mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7055-001
0.6
0.2
3
TF252-4-TL-H
0.11 ^TF252-5-TL-H
0 to 0.02
1
0.175
2
0.15
12
1 : Drain
2 : Source
3 : Gate
3
USFP
Product & Package Information
• Package
: USFP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 10,000 pcs./reel
Packing Type: TL
Marking
3
TL
D
Electrical Connection
1
12
3
2
Semiconductor Components Industries, LLC, 2013
August, 2013
O1012 TKIM/92612 TKIM/70407GB TIIM TC-00000793 No. A0841-1/7