T2800D Datasheet, PDF (1/8 Pages) ON Semiconductor – Silicon Bidirectional Thyristors

T2800D
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies.
• Blocking Voltage to 400 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Four Quadrant Gating
• Device Marking: Logo, Device Type, e.g., T2800D, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off–State Voltage(1)
VDRM,
400
(TJ = –40 to +125°C, Gate Open)
VRRM
Unit
Volts
On–State RMS Current
IT(RMS)
8.0
Amps
(All Conduction Angles, TC = +80°C)
Peak Non–Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ = +80°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
100
Amps
40
A2s
Peak Gate Power
(Pulse Width = 10 µs, TC = +80°C)
PGM
16
Watts
Average Gate Power (t = 8.3 ms,
TC = +80°C)
PG(AV)
0.35
Watt
Peak Gate Current
IGM
(Pulse Width = 10 µs, TC = +80°C)
4.0
Amps
Operating Junction Temperature Range
TJ
– 40 to
°C
+125
Storage Temperature Range
Tstg
– 40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
8 AMPERES RMS
400 VOLTS
MT2
MT1
G
4
1
2
3
TO–220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
T2800D
TO220AB
500/Box
© Semiconductor Components Industries, LLC, 1999
1
February, 2000 – Rev. 3
Publication Order Number:
T2800/D