T2322B Datasheet, PDF (1/4 Pages) ON Semiconductor – Sensitive Gate Triacs Silicon Bidirectional Thyristors

T2322B
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for ac power switching. The gate sensitivity of
these triacs permits the use of economical transistorized or integrated
circuit control circuits, and it enhances their use in low-power phase
control and load-switching applications.
Features
• Very High Gate Sensitivity
• Low On-State Voltage at High Current Levels
• Glass-Passivated Chip for Stability
• Small, Rugged Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Pb−Free Package is Available*
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off-State Voltage (Note 1) V_DRM,
200
V
(T_J = 25 to 110°C, Gate Open)
V_RRM
On-State RMS Current (T_C = 70°C)
(Full Cycle Sine Wave 50 to 60 Hz)
I_T(RMS)
2.5
A
Peak Non−Repetitive Surge Current (One
Full Cycle, Sine Wave 60 Hz, T_C = 70°C)
Circuit Fusing Consideration (t = 8.3 ms)
I_TSM
I²t
25
A
2.6
A²s
Peak Gate Power
(Pulse Width ≤ 10 ms, T_C = 70°C)
P_GM
10
W
Average Gate Power (t = 8.3 ms, T_C = 70°C) P_G(AV)
0.5
W
Peak Gate Current
(Pulse Width = 10 ms, T_C = 70°C)
I_GM
0.5
A
Operating Junction Temperature Range
T_J −40 to +110 °C
Storage Temperature Range
T_stg −40 to +150 °C
Mounting Torque (6-32 Screw) (Note 2)
−
8.0
in. lb.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of torque washer (Shakeproof WD19523 or
equivalent). Mounting Torque in excess of 6 in. lb. does not appreciably
lower case-to-sink thermal resistance. Main terminal 2 and heat-sink
contact pad are common.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 5
http://onsemi.com
TRIACS
2.5 AMPERES RMS
200 VOLTS
MT2
MT1
G
3
21
TO−225AA
(formerly TO−126)
CASE 077
STYLE 5
MARKING DIAGRAM
YWW
T
2322BG
Y
= Year
WW = Work Week
T2322B = Device Code
G
= Pb−Free Package
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
ORDERING INFORMATION
Device
T2322B
T2322BG
Package
TO225AA
TO225AA
(Pb−Free)
Shipping
500 Units/Box
500 Units/Box
Publication Order Number:
T2322/D