STK5F1U3C3D-E Datasheet, PDF (1/16 Pages) ON Semiconductor – Inverter Power IPM

STK5F1U3C3D-E
Inverter Power IPM
for 3-phase Motor Drive
www.onsemi.com
Overview
This “Inverter Power IPM” is highly integrated device containing all High Voltage (HV) control from HV-DC to
3-phase outputs in a single DIP module (Dual-In line Package). Output stage uses IGBT/FRD technology and
implements Under Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag.
Internal Boost diodes are provided for high side gate boost drive.
Function
 Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit
 All control input and status output are at low voltage levels directly compatible with microcontrollers
 Built-in cross conduction prevention
 Externally accessible embedded thermistor for substrate temperature measurement
 The level of the over-current protection current is adjustable with the external resistor, “RSD”
 Low switching noise by optimized the gate resistor
Certification
 UL1557 (File Number: E339285)
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Symbol
Remarks
Ratings
Supply voltage
VCC
P to N, surge < 500V *1
450
Collector-emitter voltage
VCE
P to U,V,W or U,V,W to N
600
Output current
Io
P, N, U, V, W terminal current
P, N, U, V, W terminal current, Tc=100C
±30
±15
Output peak current
Iop
P, N, U, V, W terminal current, PW=1ms
±49
Pre-driver supply voltage
Input signal voltage
FAULT terminal voltage
Maximum loss
VD1,2,3,4
VIN
VFAULT
Pd
VB1 to VS1,VB2 to VS2,VB3 to VS3,VDD to VSS *2
HIN1, 2, 3, LIN1, 2, 3
FAULT terminal
IGBT per channel
20
0.3 to VDD
0.3 to VDD
56.8
Junction temperature
Tj
IGBT,FRD
150
Storage temperature
Operating temperature
Tightening torque
Withstand voltage
Tstg
Tc
HIC case
MT
A screw part at use M4 type screw *3
Vis
50Hz sine wave AC 1 minute *4
40 to +125
20 to +100
1.17
2000
Reference voltage is N terminal = VSS terminal voltage unless otherwise specified.
*1: Surge voltage developed by the switching operation due to the wiring inductance between the P and N terminals.
*2: Terminal voltage: VD1=VB1VS1, VD2=VB2VS2, VD3=VB3VS3, VD4=VDDVSS.
*3: Flatness of the heat-sink should be 0.25mm and below.
*4: Test conditions: AC 2500V, 1 second.
Unit
V
V
A
A
V
V
V
W
C
C
C
Nm
VRMS
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 16 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
March 2015 - Rev. 1
Publication Order Number :
STK5F1U3C3D-E/D