SFT1345 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

SFT1345
Power MOSFET
–100V, 275mΩ, –11A, Single P-Channel
This P-Channel Power MOSFET is produced using ON Semiconductor’s
trench technology, which is specifically designed to minimize gate charge
and low on resistance. This device is suitable for applications with low gate
charge driving or low on resistance requirements.
Features
 Low On-Resistance
 4V drive
 100% Avalanche Tested
 ESD Diode-Protected Gate
 Pb-Free, Halogen Free and RoHS compliance
Typical Applications
 Reverse Battery Protection
 Load Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
VDSS
VGSS
ID
100
V
20
V
11
A
Drain Current
PW  10s, duty cycle  1%
IDP
44
A
Power Dissipation
Tc=25C
PD
1.0
W
35
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
55 to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Case Steady State
Junction to Ambient (Note 2)
Note 2 : Insertion mounted
Symbol
R_JC
R_JA
Value
3.57
125
Unit
C/W
www.onsemi.com
VDSS
100V
RDS(on) Max
275mΩ@ 10V
315mΩ@ 4.5V
330mΩ@ 4V
ID _Max
11A
ELECTRICAL CONNECTION
P-Channel
2,4
1
3
PACKING TYPE : TL
1 : Gate
2 : Drain
3 : Source
4 : Drain
MARKING
T1345
LOT No.
TL
4
1 _{2 3 IPAK(TP)}
4
1
2
3
DPAK(TP-FA)
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
February 2016 - Rev. 1
Publication Order Number :
SFT1345/D