SFT1341 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1444B
SFT1341
Power MOSFET
–40V, 112mΩ, –10A, Single P-Channel
Features
• Low On-Resistance
• Low Gate Charge
• ESD Diode-Protected Gate
• High Speed Switching
• Low Gate Drive Voltage
• Pb-free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC)
ID
Drain Current
PW≤10μs, duty cycle≤1%
IDP
Power Dissipation
Tc=25°C
PD
Junction Temperature
Tj
Storage Temperature
Tstg
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient *¹
Note : *¹ Insertion mounted
Symbol
R_θJC
R_θJA
Value
Unit
–40
V
±10
V
–10
A
–40
A
1.0
W
15
W
150
°C
−55 to +150
°C
Value
8.33
125
Unit
°C/W
http://onsemi.com
Electrical Connection
P-Channel
2, 4
1
Packing Type:TL
3
Marking
T1341
LOT No.
TL
4
1
2
IPAK(TP)
3
4
2
1
3
DPAK(TP-FA)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
Semiconductor Components Industries, LLC, 2014
September, 2014
91014 TKIM TC-00003148/60612 TKIM/40809PA MSIM TC-00001932 No.A1444-1/6